bc807 to bc808 document number 85134 rev. 1.2, 03-jan-05 vishay semiconductors www.vishay.com 1 1 3 2 e b c 3 1 2 18978 small signal transistors (pnp) features ? pnp silicon epitaxial planar transistors for switching, af driver a nd amplifier applications. especially suited for auto matic insertion in thick and thin-film circuits. these transistors are subdivided into three groups (- 16, - 25, and - 40) according to their current gain. as complementary types, the npn transistors bc817 and bc818 are recomended. mechanical data case: sot-23 plastic case weight: approx. 8.8 mg pinning: 1 = base, 2 = emitter, 3 = collector packaging codes/options: gs18 / 10 k per 13" reel (8 mm tape), 10 k/box gs08 / 3 k per 7" reel (8 mm tape), 15 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified 1) device on fiberglass substrate, see layout on next page. part ordering code marking remarks bc807-16 bc807-16-gs08 5a tape and reel bc807-25 bc807-25-gs08 5b tape and reel bc807-40 bc807-40-gs08 5c tape and reel bc808-16 BC808-16-GS08 5e tape and reel bc808-25 bc808-25-gs08 5f tape and reel bc808-40 bc808-40-gs08 5g tape and reel parameter test condition part symbol value unit collector - emitter voltage (base shorted) bc807 - v ces 50 v bc808 - v ces 30 v collector - emitter voltage (base open) bc807 - v ceo 45 v bc808 - v ceo 25 v emitter - base voltage - v ebo 5v collector current - i c 800 ma peak collector current - i cm 1000 ma peak base current - i bm 200 ma peak emitter current i em 1000 ma power dissipation p tot 310 1) mw
www.vishay.com 2 document number 85134 rev. 1.2, 03-jan-05 bc807 to bc808 vishay semiconductors maximum thermal resistance 1) device on fiberglass subs trate, see layout on next page. electrical dc characteristics electrical ac characteristics parameter test condition symbol value unit thermal resistance junction to ambient air r ja 450 1) c/w thermal resistance junction to substrate backside r sb 320 1) c/w junction temperature t j 150 c storage temperature range t s - 65 to + 150 c parameter test condition part symbol min ty p max unit dc current gain (current gain group - 16) - v ce = 1 v, - i c = 100 ma h fe 100 250 dc current gain (current gain group - 25) - v ce = 1 v, - i c = 100 ma h fe 160 400 dc current gain (current gain group - 40) - v ce = 1 v, - i c = 100 ma h fe 250 600 dc current gain - v ce = 1 v, - i c = 500 ma h fe 40 collector saturation voltage - i c = 500 ma, - i b = 50 ma - v cesat 0.7 v base saturation voltage - i c = 500 ma, - i b = 50 ma v besat 1.3 v base - emitter voltage - v ce = 1 v, - i c = 500 ma - v beon 1.2 v collector - emitter cutoff current - v ce = 45 v bc807 - i ces 100 na - v ce = 25 v bc808 - i ces 100 na - v ce = 25 v, t j = 150 c - i ces 5 a emitter - base cutoff current - v eb = 4 v - i ebo 100 na parameter test condition symbol min ty p max unit gain - bandwidth product - v ce = 5 v, - i c = 10 ma, f = 50 mhz f t 100 mhz collector - base capacitance - v cb = 10 v, f = 1 mhz c cbo 12 pf
bc807 to bc808 document number 85134 rev. 1.2, 03-jan-05 vishay semiconductors www.vishay.com 3 layout for r ja test thickness: fiberglass 1.5 mm (0.059 in.) copper leads 0.3 mm (0.012 in.) typical characteris tics (tamb = 25 c unless otherwise specified) 17451 15 (0.59) 12 (0.47) 0.8 (0.03) 5 (0.2) 7.5 (0.3) 3 (0.12) 1 (0.4) 1 (0.4) 2 (0.8) 2 (0.8) 1.5 (0.06) 5.1 (0.2) figure 1. admissible power diss ipation vs. temperature of substrate backside m w 500 400 300 200 100 0 0 100 200 c p tot t sb 19190 figure 2. collector current vs. base-emitter voltage ma 10 3 10 2 10 10 -1 1 0 1 2 v -i c - v be 19177 25 c 150 c 50 c typical limits @t =25c am b
www.vishay.com 4 document number 85134 rev. 1.2, 03-jan-05 bc807 to bc808 vishay semiconductors figure 3. pulse thermal resistance vs. pulse duration (normalized) figure 4. gain-bandwidth product vs. collector current figure 5. collector saturation voltage vs. collector current -1 10 10 1s 10 10 10 10 10 10 -1 -2 -3 -4 -5 -6 t p t p t p p i t t = 0.2 0.5 0.1 0.05 0.02 0.01 0.005 =0 10 -7 -2 10 -3 10 r thsb r thsb 19191 0 mhz 10 3 2 10 10 1 2 10 10 3 10 -i c f t t=25c f=20mhz am b - v =5 v ce 1 v 19192 ma v 0.5 0.4 0.3 0.2 0.1 0 10 3 1 10 10 -1 10 2 25 c 150 c -50c typical limits @t =25c am b ma - v cesat -i c 19193 -i c -i b =10 figure 6. dc current gain vs. collector current figure 7. base saturation voltage vs. collector current figure 8. common emitter co llector characteristics 1000 100 10 3 10 2 10 10 -1 1 -i c h fe 25 c 150 c -50c t=25c am b - v = 1 v 19173 10 ce v 2 0 10 3 1 10 10 -1 10 2 25 c 150 c -50c typical limits @t =25c am b ma - v besat -i c 19194 -i c -i b =10 1 ma 500 400 300 200 100 0 -i c 01 2 v - v ce -i = 0.2 ma b 0.4 0.6 0. 8 1 1.2 1.4 1.6 1. 8 2 2.4 2. 8 3.2 19175
bc807 to bc808 document number 85134 rev. 1.2, 03-jan-05 vishay semiconductors www.vishay.com 5 package dimensions in mm (inches) figure 9. common emitter co llector characteristics ma 100 8 0 60 40 20 0 0 10 20 v 0.35 0.25 0.2 0.15 0.1 -i = 0.05 ma b 0.3 -i c - v ce 19176 figure 10. common emitter co llector char acteristics ma 500 400 300 200 100 0 0 1 2 v 0.9 0. 8 5 0. 8 0.75 19174 -i c - v ce be - v =0.7 v 2.0 (0.079) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) 0.52 (0.020) 1 2 3 17418 2.8 (.110) 3.1 (.122) 0.4 (.016) 0.95 (.037) 0.95 (.037) 0.1 (.004) max. 1.20(.047) 1.43 (.056) 0.4 (.016) 0.4 (.016) 0.098 (.005) 0.175 (.007) 0.95 (.037) 1.15 (.045) 2.35 (.092) 2.6 (.102) iso method e mounting pad layout
www.vishay.com 6 document number 85134 rev. 1.2, 03-jan-05 bc807 to bc808 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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